Activation of High-temperature-implanted Phosphorus Atoms in 4H-SiC by Atmospheric Pressure Thermal Plasma Jet Annealing

In this study, the application of atmospheric pressure thermal plasma jet (TPJ) annealing for impurity activation in 4H-SiC is reported. The activation of phosphorus atoms implanted at 300 degrees C in 4H-SiC by TPJ irradiation and analysis of its crystallinity are investigated. At the maximum annealing temperature of 1630 degrees C, the minimum resistivity value is 3.1 m Omega.cm and the maximum free electron concentration value is 2.0 x 10(20) cm(-3). Crystal orientation analysis suggests that the sample implanted at 300 degrees C was recrystallized to a 4H-SiC(0001) structure after 1630 degrees C annealing. Furthermore, a significant increase in the carrier concentration was observed with the increasing cooling rate during the activation annealing process. Rapid cooling may suppress the impurity deactivation. These results suggest that short-time high-temperature TPJ irradiation annealing is effective for P dopant activation in 4H-SiC.