Fabrication of polycrystalline La0.67(Sr1-xCdx)0.33MnO3 thin films on Si(100) substrates by sol-gel process

被引:4
|
作者
Liu, Z. L.
Zhang, J. [1 ]
Yao, K. L.
Liu, H. R.
Jia, L. H.
Cheng, H. G.
机构
[1] Huazhong Univ Sci & Technol, Inst Mat Phys, Dept Phys, Wuhan 430074, Peoples R China
[2] Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China
基金
中国国家自然科学基金;
关键词
sol-gel; polycrystalline; low-field magnetoresistance; grain boundaries;
D O I
10.1007/s10971-006-1527-1
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Polycrystalline La-0.67 (Sr1-x Cd (x) )(0.33)MnO3 (LSCMO x = 0, 1/8, 2/8, 3/8, 4/8) films were fabricated on Si(100) single crystal substrates by the sol-gel and the rapid annealing process. According to the field-emission scan electron microscopy (FE-SEM) observation and X-ray (XRD) diffraction studies, all the samples are single phase. We also prepared a series of samples by fixing the ratio of La at 0.67. It is shown that with increase of the doping amount x in La-0.67(Sr1-x Cd (x) )(0.33)MnO3, the average A-site cation radius < A > decreases, the temperature of metal-insulator transition (T-MI) decreases monotonically, rho and magnetoresistance (MR) values increase dramatically, which can be explained by the lattice effects. The enhanced MR effect at low temperature for the LSCMO film is attributed to the suppression of the spin dependent scattering of polarized electrons at the grain boundaries. The low-field magnetoresistance values under 0.3 T are observed to be 2.48% (x = 0) at 300 K and 37.5% (x = 4/8) at 85 K, respectively.
引用
收藏
页码:93 / 97
页数:5
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