Gallium-doped zinc oxide prepared by the Pechini method.

被引:0
作者
Gonçalves, AD [1 ]
de Lima, SAM [1 ]
Davolos, MR [1 ]
机构
[1] UNESP, Inst Quim, Dept Quim Geral & Inorgan, BR-14801970 Araraquara, SP, Brazil
来源
ECLETICA QUIMICA | 2002年 / 27卷
关键词
ZnO : Ga; edta; Pechini method;
D O I
暂无
中图分类号
学科分类号
摘要
Gallium-doped zinc oxide (ZnO:Ga) was prepared by the Pechini method from zinc citrate and gallium hydroxide. By this method, it is possible to synthesize crystalline ZnO:Ga by firing the polymeric precursor in air at 900degreesC for four hours. The homogeneous resin containing 2% of dopant could be obtained only with the addition of the ethylenediaminetetraacetic acid (edta). The size of oxide particles, also, was diminished by the addition of edta.
引用
收藏
页码:293 / 304
页数:12
相关论文
共 22 条
[1]   Thermally stable, highly conductive, and transparent ZnO layers prepared in situ by chemical vapor deposition [J].
Ataev, BM ;
Bagamadova, AM ;
Mamedov, VV ;
Omaev, AK .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 65 (03) :159-163
[2]  
Downs A.J, 1993, CHEM ALUMINIUM GALLI
[3]   Sol-gel preparation of highly oriented gallium-doped zinc oxide thin films [J].
Fathollahi, V ;
Amini, MM .
MATERIALS LETTERS, 2001, 50 (04) :235-239
[4]  
Ferraro J.R., 1971, Low-Frequency Vibrations of Inorganic and Coordination Compounds
[5]  
FLASCHKA AA, 1964, EDTA TITRATIONS
[6]   THE INFRARED SPECTRA OF SOME SIMPLE AND COMPLEX CARBONATES [J].
GATEHOUSE, BM ;
LIVINGSTONE, SE ;
NYHOLM, RS .
JOURNAL OF THE CHEMICAL SOCIETY, 1958, (SEP) :3137-3142
[7]   Properties of ZnO thin films prepared by reactive evaporation [J].
Gordillo, G ;
Calderón, C .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2001, 69 (03) :251-260
[8]  
GOUVEA D, 1993, EUR J SOL STATE INOR, V30, P915
[9]   Synthesis and optelectronic characterization of gallium doped zinc oxide transparent electrodes [J].
Hirata, GA ;
McKittrick, J ;
Cheeks, T ;
Siqueiros, JM ;
Diaz, JA ;
Contreras, O ;
Lopez, OA .
THIN SOLID FILMS, 1996, 288 (1-2) :29-31
[10]   Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy [J].
Ko, HJ ;
Chen, YF ;
Hong, SK ;
Wenisch, H ;
Yao, T ;
Look, DC .
APPLIED PHYSICS LETTERS, 2000, 77 (23) :3761-3763