New insights on "capacitorless" floating-body DRAM cells.

被引：19

作者：

Fossum, Jerry G. ^{[1
]}

Lu, Zhichao

Trivedi, Vishal P.

机构：

[1] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA

[2] Freescale Semicond, Austin, TX 78721 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2007年 / 28卷 / 06期

关键词：

body capacitance; double-gate (DG) MOSFETs; floating-body effects; independent-gate (IG) FinFET; p-n junction; silicon-on-insulator (SOI) MOSFETs;

D O I：

10.1109/LED.2007.896883

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The notion of a "potential well" for charge storage in the floating body of the "capacitorless" DRAM cell is shown to be inadequate and misleading. The basic operation of the floating-body MOSFET cell (FBC) is physically overviewed, with supportive numerical device simulations and analytical modeling. New insights are revealed, including identification of the intrinsic dynamic capacitors that actually store the body charge. Multiple roles of an accumulation layer that is needed in fully depleted FBCs are physically defined for the first time. Optimal FBC designs are implied.

引用

页码：513 / 516

页数：4

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