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Facile fabrication of p- and n-type half-Heusler alloys with enhanced thermoelectric performance and low specific contact resistance employing spark plasma sintering
被引:17
作者:

Chauhan, Nagendra S.
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Acad Sci & Innovat Res AcSIR, CSIR Natl Phys Lab CSIR NPL Campus, New Delhi 110012, India
Natl Phys Lab, CSIR, Adv Mat & Devices Div, New Delhi 110012, India Acad Sci & Innovat Res AcSIR, CSIR Natl Phys Lab CSIR NPL Campus, New Delhi 110012, India

Bathula, Sivaiah
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Acad Sci & Innovat Res AcSIR, CSIR Natl Phys Lab CSIR NPL Campus, New Delhi 110012, India
Natl Phys Lab, CSIR, Adv Mat & Devices Div, New Delhi 110012, India Acad Sci & Innovat Res AcSIR, CSIR Natl Phys Lab CSIR NPL Campus, New Delhi 110012, India

Vishwakarma, Avinash
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Acad Sci & Innovat Res AcSIR, CSIR Natl Phys Lab CSIR NPL Campus, New Delhi 110012, India
Natl Phys Lab, CSIR, Adv Mat & Devices Div, New Delhi 110012, India Acad Sci & Innovat Res AcSIR, CSIR Natl Phys Lab CSIR NPL Campus, New Delhi 110012, India

Bhardwaj, Ruchi
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Acad Sci & Innovat Res AcSIR, CSIR Natl Phys Lab CSIR NPL Campus, New Delhi 110012, India
Natl Phys Lab, CSIR, Adv Mat & Devices Div, New Delhi 110012, India Acad Sci & Innovat Res AcSIR, CSIR Natl Phys Lab CSIR NPL Campus, New Delhi 110012, India

Johari, Kishor Kumar
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Acad Sci & Innovat Res AcSIR, CSIR Natl Phys Lab CSIR NPL Campus, New Delhi 110012, India
Natl Phys Lab, CSIR, Adv Mat & Devices Div, New Delhi 110012, India Acad Sci & Innovat Res AcSIR, CSIR Natl Phys Lab CSIR NPL Campus, New Delhi 110012, India

Gahtori, Bhasker
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Acad Sci & Innovat Res AcSIR, CSIR Natl Phys Lab CSIR NPL Campus, New Delhi 110012, India
Natl Phys Lab, CSIR, Adv Mat & Devices Div, New Delhi 110012, India Acad Sci & Innovat Res AcSIR, CSIR Natl Phys Lab CSIR NPL Campus, New Delhi 110012, India

Dhar, Ajay
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Acad Sci & Innovat Res AcSIR, CSIR Natl Phys Lab CSIR NPL Campus, New Delhi 110012, India
Natl Phys Lab, CSIR, Adv Mat & Devices Div, New Delhi 110012, India Acad Sci & Innovat Res AcSIR, CSIR Natl Phys Lab CSIR NPL Campus, New Delhi 110012, India
机构:
[1] Acad Sci & Innovat Res AcSIR, CSIR Natl Phys Lab CSIR NPL Campus, New Delhi 110012, India
[2] Natl Phys Lab, CSIR, Adv Mat & Devices Div, New Delhi 110012, India
关键词:
Sintering;
Contacts;
FIGURE;
ENERGY;
MERIT;
D O I:
10.1016/j.matlet.2018.06.019
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Half-Heusler (HH) materials have been actively explored for thermoelectric (TE) based power generation applications in the mid-temperature regime. In the current work, we demonstrate the defect engineering in non-stoichiometric HH alloys to realize a state-of-the-art ZT 1 at 873 K for both n-type Zr0.5Hf0.5Ni1-xSn and p-type Zr0.5Hf0.5Co1+xSb0.8Sn0.2 (x = 0.04) compositions. This enhanced ZT leads to high conversion efficiency of -9% with a high output power density similar to 9 Wcm(2) in both the synthesized n and p-type HH alloys, estimated using cumulative temperature dependence model. A time efficient fabrication route of HH device thermo-elements with Ti electrical contacts, employing spark plasma sintering process, is also demonstrated in the optimized defect engineered HH compositions. A low specific contact resistivity of <10 m Omega.cm(2) in both n-type and p-type HH/Ti thermo-elements was realized, which suggests exciting opportunities and possibilities for achieving highly efficient TE based power generation. (C) 2018 Elsevier B.V. All rights reserved.
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页码:250 / 253
页数:4
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