Exciton Dynamics, Transport, and Annihilation in Atomically Thin Two-Dimensional Semiconductors

被引:184
作者
Yuan, Long [1 ]
Wang, Ti [1 ]
Zhu, Tong [1 ]
Zhou, Mingwei [1 ]
Huang, Libai [1 ]
机构
[1] Purdue Univ, Dept Chem, W Lafayette, IN 47907 USA
来源
JOURNAL OF PHYSICAL CHEMISTRY LETTERS | 2017年 / 8卷 / 14期
基金
美国国家科学基金会;
关键词
MONO LAYER; BANDGAP RENORMALIZATION; MONOLAYER WS2; RECOMBINATION; PHOTOLUMINESCENCE; DIFFUSION; ENERGY; MOS2;
D O I
10.1021/acs.jpclett.7b00885
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Large binding energy and unique exciton fine structure make the transition metal dichalcogenides (TMDCs) an ideal platform to study exciton behaviors in two-dimensional (2D) systems. While excitons in these systems have been extensively researched, there currently lacks a consensus on mechanisms that control dynamics. In this Perspective, we discuss extrinsic and intrinsic factors in exciton dynamics, transport, and annihilation in 2D TMDCs. Intrinsically, dark and bright exciton energy splitting is likely to play a key role in modulating the dynamics. Extrinsically, defect scattering is prevalent in single-layer TMDCs, which leads to rapid picosecond decay and limits exciton transport. The exciton-exciton annihilation process in single-layer TMDCs is highly efficient, playing an important role in the nonradiative recombination rate in the high exciton density regime. Future challenges and opportunities to control exciton dynamics are discussed.
引用
收藏
页码:3371 / 3379
页数:9
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