Structural Diversity and Electronic Properties of 3d Transition Metal Tetraphosphides, TMP4 (TM = V, Cr, Mn, and Fe)

被引:30
作者
Gong, Ning [1 ]
Deng, Chunxing [1 ]
Wu, Lailei [1 ,3 ]
Wan, Biao [1 ,2 ]
Wang, Zhibin [3 ]
Li, Zhiping [3 ]
Gou, Huiyang [2 ,3 ]
Gao, Faming [3 ]
机构
[1] Yanshan Univ, Coll Mat Sci & Engn, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Peoples R China
[2] Ctr High Pressure Sci & Technol Adv Res, Beijing 100094, Peoples R China
[3] Yanshan Univ, Coll Environm & Chem Engn, Key Lab Appl Chem, Qinhuangdao 066004, Peoples R China
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
REVERSIBLE LITHIUM UPTAKE; CRYSTAL-STRUCTURE; EVOLUTION REACTION; BIFUNCTIONAL ELECTROCATALYSTS; HYDROGEN; PHOSPHIDE; COP3; POLYPHOSPHIDE; REFINEMENT; MECHANISM;
D O I
10.1021/acs.inorgchem.8b01380
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
Transition-metal (TM) phosphides attract increasing attention with applications for energy conversion and storage, due to their outstanding physical, chemical, and electronic properties. The 3d transition metal tetraphosphides (TMP4, TM = V, Cr, Mn, and Fe) possess multiple allotropies and rich electronic properties. Here, we perform the investigations of the structural, electronic, and elastic properties for 3d-TMP 4 (TM = V, Cr, Mn, and Fe) using density functional theory (DFT) calculations. These compounds are featured with alternating buckled phosphorus sheets with ten-numbered phosphorus rings and varied transition-metal layers. Hybrid DFT calculations reveal that TMP 4 compounds exhibit a wide range of electrical properties, ranging from metallic behavior for VP 4 to semiconducting behavior for CrP4 with the narrow direct band gap of 0.63 eV to enlarged semiconducting MnP4 and FeP4, with band gap of 1.6-2.1 eV. The bonding analysis indicates that P-P and TM-P covalent interactions dominate in the phosphorus sheets and TMP6 octahedrons, which are responsible for the structural and electronic diversity.
引用
收藏
页码:9385 / 9392
页数:8
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