Dielectric spectroscopy of Pb0.92La0.08Zr0.52Ti0.48O3 films on hastelloy substrates with and without LaNiO3 buffer layers

被引：17

作者：

Narayanan, Manoj ^{[1
]}

Ma, Beihai ^{[1
]}

Balachandran, U. ^{[1
]}

Li, Wei ^{[2
]}

机构：

[1] Argonne Natl Lab, Div Energy Syst, Argonne, IL 60439 USA

[2] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 02期

关键词：

buffer layers; carbon; chromium alloys; cobalt alloys; dielectric relaxation; dielectric thin films; iron alloys; lanthanum compounds; lead compounds; manganese alloys; molybdenum alloys; permittivity; silicon alloys; sol-gel processing; tungsten alloys; vanadium alloys; zirconium compounds; TITANATE THIN-FILMS; METAL FOILS; CAPACITORS; MECHANISMS; CERAMICS;

D O I：

10.1063/1.3291127

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films were deposited by sol-gel synthesis on Hastelloy substrates with and without a LaNiO3 buffer. The dielectric properties were measured as a function of temperature and frequency to study the cause of dielectric degradation in PLZT films directly on hastelloy substrates. These measurements indicated an increased charge carrier activity in films without a buffer layer. We propose that a region of the film closer to the substrate surface is more oxygen deficient than the bulk and is responsible for the degradation in properties rather than the presence of a low parasitic secondary-phase interfacial layer such as NiOx.

引用

页数：5

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