Influence of post deposition annealing on structural and electrical properties of magnetron sputtered Al/(Ta2O5)0.85(TiO2)0.15/p-Si structure

被引：0

作者：

Sekhar, M. Chandra ^{[1
]}

Reddy, N. Nanda Kumar ^{[1
]}

Vedanayakam, S. Victor ^{[1
]}

Reddy, M. Raja ^{[1
]}

Uthanna, S. ^{[2
]}

机构：

[1] Madanapalli Inst Technol & Sci, Dept Phys, Madanapalle, Andhra Pradesh, India

[2] Sri Venkateswara Univ, Dept Phys, Tirupati 517502, Andhra Pradesh, India

来源：

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2014年 / 16卷 / 11-12期

关键词：

X-ray diffraction; X-ray photoelectron spectroscopy; Scanning electron microscopy (SEM); Tantalum oxide; Poole-Frenkel and Schottky emissions; OXIDE THIN-FILMS; DOPED INDIUM OXIDE; SOL-GEL METHOD; METALORGANIC DECOMPOSITION; TA2O5; FILMS; CRYSTALLIZATION; PHTHALOCYANINE; TIO2;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of [(Ta2O5)(0.85)(TiO2)(0.15)] were deposited on p-Si (100) substrates by DC reactive magnetron sputtering technique subsequently, the as-deposited films were annealed at various temperatures in the range 873 -1173 K. The composition and core level binding energies of the films were analyzed by XPS. X-ray diffraction results revealed that the as-deposited and the films annealed at 873 K was amorphous, where as the films annealed at 973 K were transformed to polycrystalline. The as-deposited (Ta2O5)(0.85)(TiO2)(0.15)5 film (300 nm thick) showed a low leakage current density of 7.7x10(-5) A/cm(2) at 1.5 V and it was decreased to 1.1x10(-6) A/cm(2) at 1173 K. The current conduction mechanisms in the (Ta2O5)(0.85)(TiO2)(0.15) films, was compared and correlated with the Poole - Frenkel and Schottky emissions.

引用

页码：1295 / 1299

页数：5

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