Equilibrium phase diagrams for dislocation free self-assembled quantum dots

被引:60
作者
Daruka, I [1 ]
Barabasi, AL [1 ]
机构
[1] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA
关键词
D O I
10.1063/1.121289
中图分类号
O59 [应用物理学];
学科分类号
摘要
The equilibrium theory of self-assembled quantum dot (SAQD) formation can account for many of the experimentally observed growth modes. Here, we show that despite the large number of material constants entering the free energy of strained islands, then are only four topologically different phase diagrams describing the SAQD formation process. We derive each of these phase diagrams and discuss the physical properties of the predicted growth modes. (C) 1998 American Institute of Physics.
引用
收藏
页码:2102 / 2104
页数:3
相关论文
共 14 条
[1]  
Barabasi AL, 1997, APPL PHYS LETT, V70, P2565, DOI 10.1063/1.118920
[2]  
DARUKA L, 1997, PHYS REV LETT, V79, P3708
[3]   Mean-field theory of quantum dot formation [J].
Dobbs, HT ;
Vvedensky, DD ;
Zangwill, A ;
Johansson, J ;
Carlsson, N ;
Seifert, W .
PHYSICAL REVIEW LETTERS, 1997, 79 (05) :897-900
[4]   Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures [J].
Kamins, TI ;
Carr, EC ;
Williams, RS ;
Rosner, SJ .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (01) :211-219
[5]   Heterogeneous nucleation of coherently strained islands during epitaxial growth of Ge on Si(110) [J].
Krishnamurthy, M ;
Yang, BK ;
Weil, JD ;
Slough, CG .
APPLIED PHYSICS LETTERS, 1997, 70 (01) :49-51
[7]   Shape transition of germanium nanocrystals on a silicon (001) surface from pyramids to domes [J].
Medeiros-Ribeiro, G ;
Bratkovski, AM ;
Kamins, TI ;
Ohlberg, DAA ;
Williams, RS .
SCIENCE, 1998, 279 (5349) :353-355
[8]   A MODEL FOR STRAIN-INDUCED ROUGHENING AND COHERENT ISLAND GROWTH [J].
ORR, BG ;
KESSLER, D ;
SNYDER, CW ;
SANDER, L .
EUROPHYSICS LETTERS, 1992, 19 (01) :33-38
[9]   Three-dimensional carrier confinement in strain-induced self-assembled quantum dots [J].
Petroff, PM ;
MedeirosRibeiro, G .
MRS BULLETIN, 1996, 21 (04) :50-54
[10]   GROWTH OF GERMANIUM FILMS ON SI(001) SUBSTRATES [J].
ROLAND, C ;
GILMER, GH .
PHYSICAL REVIEW B, 1993, 47 (24) :16286-16298