Development of dry-nano-polishing technique using reactive ion etching for ultra thin titanium wafer

被引：2

作者：

Chino, Teruya ^{[1
]}

Watanabe, Yuta ^{[1
]}

Tsukiyama, Yosuke ^{[1
]}

Sohgawa, Masayuki ^{[1
]}

Abe, Takashi ^{[1
]}

机构：

[1] Niigata Univ, Grad Sch Sci & Technol, Niigata, Japan

来源：

ELECTRONICS AND COMMUNICATIONS IN JAPAN | 2021年 / 104卷 / 02期

基金：

日本学术振兴会;

关键词：

dry polishing; plasma; titanium; tough MEMS; ultrathin wafer;

D O I：

10.1002/ecj.12317

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, we developed a dry-nano-polishing technique using reactive ion etching for ultra thin titanium wafer. The surface of titanium coated with photoresist is polished by reactive ion etching using SF6 /C4F8 gas. Etching speed of titanium and photoresist were adjusted to close to each other by changing temperature and ratio of SF6 /C4F8 gas. By etching titanium under these conditions, the smooth surface shape of the resist was transferred to titanium. By combining with photolithography, it is possible to polish a specific part.

引用

页数：6

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