Absorption recovery in strongly saturated quantum-well electroabsorption modulators

被引：8

作者：

Hojfeldt, S ^{[1
]}

Romstad, F ^{[1
]}

Mork, J ^{[1
]}

机构：

[1] Tech Univ Denmark, COM, DK-2800 Lyngby, Denmark

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2003年 / 15卷 / 05期

关键词：

absorption recovery; all-optical signal processing; drift-diffusion model; electroabsorption modulator (EAM); InGaAsP; optical communication; semiconductor devices; sweep-out dynamics;

D O I：

10.1109/LPT.2003.809986

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We observe experimentally that a quantum-well electroabsorption modulator, when strongly saturated by a highly energetic optical pulse, may exhibit an absorption recovery time much longer than for excitation with a low-energy pulse. Using a comprehensive drift-diffusion. type model, we are able to explain this effect theoretically. The. prolongation of the absorption recovery is induced by carrier distribution effects, not by field-induced changes in the dynamical transport parameters such as the time carriers take to escape from the wells.

引用

页码：676 / 678

页数：3

共 9 条

[1]

[Anonymous], 1991, Proc. 4th Int. Conf. Simul. Semicon. Dev. Process

[2] QUANTUM-WELL CARRIER SWEEP OUT - RELATION TO ELECTROABSORPTION AND EXCITON SATURATION [J].