ZnO:H indium-free transparent conductive electrodes for active-matrix display applications

被引：8

作者：

Chen, Shuming ^{[1
]}

Wang, Sisi ^{[1
]}

机构：

[1] South Univ Sci & Technol China, Dept Elect & Elect Engn, Shenzhen 518055, Guangdong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 22期

基金：

中国国家自然科学基金;

关键词：

THIN-FILM-TRANSISTOR; HYDROGEN;

D O I：

10.1063/1.4903499

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transparent conductive electrodes based on hydrogen (H)-doped zinc oxide (ZnO) have been proposed for active-matrix (AM) display applications. When fabricated with optimal H plasma power and optimal plasma treatment time, the resulting ZnO:H films exhibit low sheet resistance of 200 Omega/square and high average transmission of 85% at a film thickness of 150 nm. The demonstrated transparent conductive ZnO:H films can potentially replace indium-tin-oxide and serve as pixel electrodes for organic light-emitting diodes as well as source/drain electrodes for ZnO-based thin-film transistors. Use of the proposed ZnO:H electrodes means that two photomask stages can be removed from the fabrication process flow for ZnO-based AM backplanes. (C) 2014 AIP Publishing LLC.

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页数：4

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