RF reliability performance of AlGaN/GaN HEMTs on Si substrate at 10 GHz

被引:13
|
作者
Dumka, DC [1 ]
Lee, C [1 ]
Tserng, HQ [1 ]
Saunier, P [1 ]
机构
[1] TriQuint Semicond Texas, R&D Engn, Richardson, TX 75083 USA
关键词
D O I
10.1049/el:20046746
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
RF reliability performance of AlGaN/GaN HEMTs on Si substrate at 10 GHz is presented for the first time. Devices were fabricated in MBE-grown AlGaN/GaN on a two- inch Si (1 1 1) substrate. Devices demonstrating continuous wave output power between 3.9 and 6.2 W/mm are used in this study Drifts in output power, PAE, drain current and gate current under RF stress at various biases are measured. A device biased at a drain voltage of 40 V for initial output power of 6.2 W/mm showed a small power drift of about 0.5 dB in 125 h of stress, indicating a promising reliability of GaN HEMTs on Si.
引用
收藏
页码:1554 / 1556
页数:3
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