RF reliability performance of AlGaN/GaN HEMTs on Si substrate at 10 GHz

被引：13

作者：

Dumka, DC ^{[1
]}

Lee, C ^{[1
]}

Tserng, HQ ^{[1
]}

Saunier, P ^{[1
]}

机构：

[1] TriQuint Semicond Texas, R&D Engn, Richardson, TX 75083 USA

来源：

ELECTRONICS LETTERS | 2004年 / 40卷 / 24期

关键词：

D O I：

10.1049/el:20046746

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

RF reliability performance of AlGaN/GaN HEMTs on Si substrate at 10 GHz is presented for the first time. Devices were fabricated in MBE-grown AlGaN/GaN on a two- inch Si (1 1 1) substrate. Devices demonstrating continuous wave output power between 3.9 and 6.2 W/mm are used in this study Drifts in output power, PAE, drain current and gate current under RF stress at various biases are measured. A device biased at a drain voltage of 40 V for initial output power of 6.2 W/mm showed a small power drift of about 0.5 dB in 125 h of stress, indicating a promising reliability of GaN HEMTs on Si.

引用

页码：1554 / 1556

页数：3

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