Fabrication of Cu(In, Ga)Se2 thin film solar cell absorbers from electrodeposited bilayers

被引：4

作者：

Oda, Yusuke ^{[1
]}

Matsubayashi, Masakazu ^{[1
]}

Minemoto, Takashi ^{[1
]}

Takakura, Hideyuki ^{[1
]}

机构：

[1] Ritsumeikan Univ, Coll Sci & Engn, Kusatsu 5258577, Japan

来源：

CURRENT APPLIED PHYSICS | 2010年 / 10卷

关键词：

Cu(In; Ga)Se-2; Electrodeposition; Bilayers; Solar cell;

D O I：

10.1016/j.cap.2009.11.022

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

CuInSe2 (CIS) and Cu(In, Ga)Se-2 (CIGS) films as solar cell absorbers have been fabricated from electrodeposited (ED) In-Se/CIS and CIS/CuGaSe2 (CGS) bilayers, respectively Firstly, In-Se/CIS bilayers were intermixed by annealing at 600 degrees C for 10 min and it followed that OS films with large grains and controlled compositional ratios were realized CIS solar cells using these films showed around 2 2% efficiency Next. CIS/CGS bilayers were annealed at 600 degrees C for 60 min for intermixing Here, oxygen-free CGS films prepared from Cu-Ga-Se solution added Li2SO4 as the supporting electrolyte were used because Ga-O compound formed in ED-CGS films worked as the defects As the results. around 2 9% efficiency CIGS solar cell using the films was realized Especially. 29 7 mA/cm(2) and 36 1 mA/cm(2) high short-circuit current density were obtained in the CIS and CIGS solar cells, respectively These Jesuits indicate that ED-bilayers technique is useful to realize low-cost and high efficiency solar cell (C) 2009 Elsevier B V All rights reserved

引用

页码：S146 / S149

页数：4

共 8 条

[1] 12.3% efficient CuIn1-xGaxSe2-based device from electrodeposited precursor [J].

Bhattacharya, RN ;

Wiesner, H ;

Berens, TA ;

Matson, J ;

Keane, J ;

Ramanathan, K ;

Swartzlander, A ;

Mason, A ;

Noufi, RN .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (04) :1376-1379

[2] 15.4% CuIn1-xGaxSe2-based photovoltaic cells from solution-based precursor films [J].

Bhattacharya, RN ;

Hiltner, JF ;

Batchelor, W ;

Contreras, MA ;

Noufi, RN ;

Sites, JR .

THIN SOLID FILMS, 2000, 361 :396-399

[3] Single bath electrodeposition of CuInSe2 and Cu(In,Ga)Se2 for thin film photovoltaic cells [J].

Calixto, ME ;

Dobson, KD ;

McCandless, BE ;

Birkmire, RW .

Conference Record of the Thirty-First IEEE Photovoltaic Specialists Conference - 2005, 2005, :378-381

[4] Stabilization of Manufacturing Process of CIGS Solar Cell with Treatment of CIGS Surface by In and S Containing Solution [J].

Hashimoto, Y. ;

Nishiwaki, S. ;

Negami, T. ;

Wada, T. .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2000, 39 (01) :415-417

[5]

HASHIMOTO Y, 2001, P 17 EUR PV SOL EN C, P22

[6] Electrodeposition of crack-free CuGaSe2 thin films from single bath [J].

Oda, Yusuke ;

Minemoto, Takashi ;

Takakura, Hideyuki .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2008, 155 (05) :H292-H295

[7]

Ramdani O., 2006, P 21 EUROPEAN PHOTOV, P1866

[8] 19.9%-efficient ZnO/CdS/CuInGaSe2 solar cell with 81.2% fill factor [J].

Repins, Ingrid ;

Contreras, Miguel A. ;

Egaas, Brian ;

DeHart, Clay ;

Scharf, John ;

Perkins, Craig L. ;

To, Bobby ;

Noufi, Rommel .

PROGRESS IN PHOTOVOLTAICS, 2008, 16 (03) :235-239

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