Electrochemical study on metal corrosion in chemical mechanical planarization process

被引：14

作者：

Kondo, Seiichi ^{[1
]}

Ichige, Yasuhiro ^{[1
]}

Otsuka, Yuya ^{[1
]}

机构：

[1] Hitachi Chem Co Ltd, Hitachi, Ibaraki 3178555, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2017年 / 56卷 / 07期

关键词：

GALVANIC CORROSION; IMPEDANCE SPECTROSCOPY; TANX BARRIERS; ACID SLURRY; COPPER SEED; COBALT; MICROSCOPY; BEHAVIOR; LAYER;

D O I：

10.7567/JJAP.56.07KA01

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Typical metal corrosions caused by the chemical mechanical planarization (CMP) process are discussed in this review paper. By categorizing them into seven kinds of corrosion, namely, chemical corrosion, crevice corrosion, crystal-orientation-dependent corrosion, narrow trench corrosion, photocorrosion, galvanic corrosion, and electrostatic-charge induced corrosion, we discuss their mechanisms and how to suppress them on the basis of electrochemical studies. Moreover, we demonstrate the usefulness of three-dimensional pH-potential diagrams for predicting corrosion issues in an actual CMP process. (C) 2017 The Japan Society of Applied Physics

引用

页数：8

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