Modeling of optical gain properties of multiple cations InGaAs-InAlAs quantum-well intermixing

被引:8
|
作者
Chan, MCY [1 ]
Chan, Y [1 ]
Li, EH [1 ]
机构
[1] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Peoples R China
关键词
diffusion process; InAlGaAs; optical gain; quantum-well interdiffusion; quantum-well intermixing; quantum-well lasers; tunable devices;
D O I
10.1109/3.661461
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Multiple cations intermixing in an In0.53Ga0.47As-In0.52Al0.48As quantum-well (QW) structure with 60-Angstrom well width is being studied based on the expanded form of Fick's second law, Interdiffusion of the indium sublattice can result in a maximum compressive strain of 0.64% when annealing time reaches 3 h at 812 degrees C. For a small interdiffusion, i.e., 1-1.5 h, the subband separation between the lowest heavy and light hole states is at its greatest. This has a major contribution to the modified band structure and averaged density of states,which can result in an enhanced optical gain up to 40%. This initial stage of intermixing provides the best lasing performance, For large interdiffusion, i.e., up to 6 h, a large blue shift of the peak gain from 0.842 eV (lambda = 1.47 mu m) to 1.016 eV (lambda = 1.22 mu m) is obtained, thus giving a high tunability of the lasing wavelength.
引用
收藏
页码:519 / 525
页数:7
相关论文
共 50 条
  • [31] NONLINEAR-OPTICAL PROPERTIES OF AN INGAAS/INALAS MULTIPLE-QUANTUM-WELL WAVE-GUIDE WITH PULSED EXCITATION
    KANETAKE, T
    INOUE, H
    TANAKA, S
    HANATANI, S
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (03) : 418 - 421
  • [32] Intermixing of InGaAs/GaAs Quantum Well Using Multiple Cycles Annealing
    Hongpinyo, V.
    Ding, Y. H.
    Dimas, C. E.
    Wang, Y.
    Ooi, B. S.
    Qiu, W.
    Goddard, L. L.
    Behymer, E. M.
    Cole, G. D.
    Bond, T. C.
    2008 IEEE PHOTONICSGLOBAL@SINGAPORE (IPGC), VOLS 1 AND 2, 2008, : 51 - +
  • [33] INTERMIXING OF INGAAS/INP MULTIPLE QUANTUM WELL STRUCTURES BY GA IMPLANTATION
    SUMIDA, H
    ASAHI, H
    YU, SJ
    ASAMI, K
    GONDA, S
    TANOUE, H
    APPLIED PHYSICS LETTERS, 1989, 54 (06) : 520 - 522
  • [34] OPTICAL-PROPERTIES OF ATOMICALLY CONTROLLED INGAAS/INP QUANTUM-WELL STRUCTURES
    ASAHI, H
    IJUIN, H
    KOHARA, T
    ASAMI, K
    WATANABE, H
    GONDA, S
    APPLIED SURFACE SCIENCE, 1994, 75 (1-4) : 242 - 247
  • [35] High-temperature optical gain of 980 nm InGaAs/AlGaAs quantum-well lasers
    Beffa, F
    Jäckel, H
    Achtenhagen, M
    Harder, C
    Erni, D
    APPLIED PHYSICS LETTERS, 2000, 77 (15) : 2301 - 2303
  • [36] LARGELY ENHANCED BOUND-TO-MINIBAND ABSORPTION IN AN INGAAS MULTIPLE QUANTUM-WELL WITH SHORT-PERIOD SUPERLATTICE INALAS INGAAS BARRIER
    YU, LS
    LI, SS
    HO, P
    APPLIED PHYSICS LETTERS, 1991, 59 (21) : 2712 - 2714
  • [37] MEASUREMENTS OF THE POLARIZATION DEPENDENT OF THE GAIN OF STRAINED MULTIPLE QUANTUM-WELL INGAAS-INP LASERS
    TANBUNEK, T
    OLSSON, NA
    LOGAN, RA
    WECHT, KW
    SERGENT, AM
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (02) : 103 - 105
  • [38] Highly-sensitive hall device made of InAlAs/InGaAs quantum-well structures
    Sugiyama, Y.
    Tacano, M.
    Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory, 1994, 58 (08): : 23 - 29
  • [39] Experimental analysis and modeling of buried waveguides fabricated by quantum-well intermixing
    Haysom, JE
    Delâge, A
    He, JJ
    Koteles, ES
    Poole, PJ
    Feng, Y
    Goldberg, RD
    Mitchell, IV
    Charbonneau, S
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1999, 35 (09) : 1354 - 1363
  • [40] Effect of doping on the figures of merit for quantum-well infrared photodetectors based on InGaAs/InAlAs
    Figueroa, B. P.
    Kawabata, R. M. S.
    Maia, A. D. B.
    Pires, M. P.
    Souza, P. L.
    2013 28TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO 2013), 2013,