Modeling of optical gain properties of multiple cations InGaAs-InAlAs quantum-well intermixing

被引:8
作者
Chan, MCY [1 ]
Chan, Y [1 ]
Li, EH [1 ]
机构
[1] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Peoples R China
关键词
diffusion process; InAlGaAs; optical gain; quantum-well interdiffusion; quantum-well intermixing; quantum-well lasers; tunable devices;
D O I
10.1109/3.661461
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Multiple cations intermixing in an In0.53Ga0.47As-In0.52Al0.48As quantum-well (QW) structure with 60-Angstrom well width is being studied based on the expanded form of Fick's second law, Interdiffusion of the indium sublattice can result in a maximum compressive strain of 0.64% when annealing time reaches 3 h at 812 degrees C. For a small interdiffusion, i.e., 1-1.5 h, the subband separation between the lowest heavy and light hole states is at its greatest. This has a major contribution to the modified band structure and averaged density of states,which can result in an enhanced optical gain up to 40%. This initial stage of intermixing provides the best lasing performance, For large interdiffusion, i.e., up to 6 h, a large blue shift of the peak gain from 0.842 eV (lambda = 1.47 mu m) to 1.016 eV (lambda = 1.22 mu m) is obtained, thus giving a high tunability of the lasing wavelength.
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页码:519 / 525
页数:7
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