Modeling of optical gain properties of multiple cations InGaAs-InAlAs quantum-well intermixing

被引:8
|
作者
Chan, MCY [1 ]
Chan, Y [1 ]
Li, EH [1 ]
机构
[1] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Peoples R China
关键词
diffusion process; InAlGaAs; optical gain; quantum-well interdiffusion; quantum-well intermixing; quantum-well lasers; tunable devices;
D O I
10.1109/3.661461
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Multiple cations intermixing in an In0.53Ga0.47As-In0.52Al0.48As quantum-well (QW) structure with 60-Angstrom well width is being studied based on the expanded form of Fick's second law, Interdiffusion of the indium sublattice can result in a maximum compressive strain of 0.64% when annealing time reaches 3 h at 812 degrees C. For a small interdiffusion, i.e., 1-1.5 h, the subband separation between the lowest heavy and light hole states is at its greatest. This has a major contribution to the modified band structure and averaged density of states,which can result in an enhanced optical gain up to 40%. This initial stage of intermixing provides the best lasing performance, For large interdiffusion, i.e., up to 6 h, a large blue shift of the peak gain from 0.842 eV (lambda = 1.47 mu m) to 1.016 eV (lambda = 1.22 mu m) is obtained, thus giving a high tunability of the lasing wavelength.
引用
收藏
页码:519 / 525
页数:7
相关论文
共 50 条
  • [1] Modeling of optical gain properties of multiple cations InGaAs-InAlAs quantum-well intermixing
    Univ of Hong Kong, Hong Kong
    IEEE J Quantum Electron, 3 (519-525):
  • [2] Multiple cations interdiffusion in InGaAs/InAlAs quantum well structure and their optical gain properties
    Chan, Y
    Chan, MCY
    1998 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS, 1998, : 70 - 73
  • [3] INGAAS-INALAS MULTIPLE QUANTUM-WELL OPTICAL BISTABLE DEVICES USING THE RESONANT TUNNELING EFFECT
    KAWAMURA, Y
    ASAI, H
    MATSUO, S
    AMANO, C
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1992, 28 (01) : 308 - 314
  • [4] On the optimization of InGaAs-InAlAs quantum-well structures for electroabsorption modulators
    Pires, MP
    de Souza, PL
    Yavich, B
    Pereira, RG
    Carvalho, W
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 2000, 18 (04) : 598 - 603
  • [5] DESIGN OF INGAAS-INALAS MULTIPLE-QUANTUM-WELL (MQW) OPTICAL MODULATORS
    KAWANO, K
    WAKITA, K
    MITOMI, O
    KOTAKA, I
    NAGANUMA, M
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1992, 28 (01) : 224 - 230
  • [6] Three cations intermixed InGaAs/InAlAs quantum well structure and their optical gain properties
    Chan, Y
    Chan, MCY
    Li, EH
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VI, PTS 1 AND 2, 1998, 3283 : 357 - 364
  • [7] Barrier-enhanced InGaAs/InAlAs photodetectors using quantum-well intermixing
    Tait, GB
    Ameen, DB
    SOLID-STATE ELECTRONICS, 2004, 48 (10-11) : 1783 - 1790
  • [8] ANISOTROPIC ELECTROABSORPTION AND OPTICAL MODULATION IN INGAAS/INALAS MULTIPLE QUANTUM-WELL STRUCTURES
    WAKITA, K
    KAWAMURA, Y
    YOSHIKUNI, Y
    ASAHI, H
    UEHARA, S
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) : 1831 - 1836
  • [9] NONLINEAR SPECTROSCOPY OF INGAAS/INALAS MULTIPLE QUANTUM-WELL STRUCTURES
    WEINER, JS
    PEARSON, DB
    MILLER, DAB
    CHEMLA, DS
    SIVCO, D
    CHO, AY
    APPLIED PHYSICS LETTERS, 1986, 49 (09) : 531 - 533
  • [10] INGAAS/INALAS MULTIPLE QUANTUM-WELL RESONANT TUNNELING PHOTO TRANSISTOR FOR OPTICAL BISTABILITY
    KAWAMURA, Y
    ASAI, H
    NAGANUMA, M
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (112): : 607 - 612