Electrochemical micromachining of silicon platforms for optical fibre alignment

被引:10
作者
Guendouz, M
Pedrono, N
Charrier, J
Joubert, P
Le Rouzic, J
机构
[1] Univ Rennes 1, IUT Lannion, Grp Microelect & Visualisat, F-22302 Lannion, France
[2] France Telecom, CNET, F-22307 Lannion, France
关键词
micromachining;
D O I
10.1049/el:19971166
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The authors present an original and low-cost technique for placing and aligning, optical fibres on silicon platforms. Porous silicon obtained by electrochemical etching in delineated areas is used as a sacrificial material. It is shown that this method, which is not dependent on the crystallographic orientations, provides well-defined grooves.
引用
收藏
页码:1695 / 1696
页数:2
相关论文
共 5 条
[1]   ANISOTROPIC ETCHING OF SILICON [J].
BEAN, KE .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) :1185-1193
[2]   Porous silicon as a sacrificial material [J].
Bell, TE ;
Gennissen, PTJ ;
DeMunter, D ;
Kuhl, M .
JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 1996, 6 (04) :361-369
[3]  
Deimel P. P., 1991, Journal of Micromechanics and Microengineering, V1, P199, DOI 10.1088/0960-1317/1/4/002
[4]   ANISOTROPIC ETCHING OF CRYSTALLINE SILICON IN ALKALINE-SOLUTIONS .1. ORIENTATION DEPENDENCE AND BEHAVIOR OF PASSIVATION LAYERS [J].
SEIDEL, H ;
CSEPREGI, L ;
HEUBERGER, A ;
BAUMGARTEL, H .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (11) :3612-3626
[5]   POROUS SILICON FORMATION MECHANISMS [J].
SMITH, RL ;
COLLINS, SD .
JOURNAL OF APPLIED PHYSICS, 1992, 71 (08) :R1-R22