Selective and non-selective wet-chemical etchants for GaSb-based materials

被引：57

作者：

Dier, O ^{[1
]}

Lin, C ^{[1
]}

Grau, M ^{[1
]}

Amann, MC ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2004年 / 19卷 / 11期

关键词：

D O I：

10.1088/0268-1242/19/11/006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A series of wet-chemical etchants for materials lattice-matched to GaSb was investigated. The etch rates for GaSb, AlAsSb, InAsSb and InAs with etch solutions based on KNa-tartaric acid (C4H4KNaO6), citric acid (C6H8O7) and hydrochloric acid were determined and the selectivities for the four different etching solutions are shown. The applicability of the selectivity between GaSb and InAs (respectively InAsSb) with C4H4KNaO6:HCl:H2O2:H2O (selectivity higher than 15:1) and C6H8O7:H2O2 (selectivity around 1:100) is proved by a substrate removal experiment. Also a new etchant for AlAsSb is proposed: HCl:H2O:H2O etches AlAsSb versus GaSb with a selectivity of 5:1 and the GaSb surface underneath is smooth and without any remaining particles of oxidized aluminium.

引用

页码：1250 / 1253

页数：4

共 15 条

[1] Wet thermal oxidation of AlAsSb against As/Sb ratio [J].

Blum, O ;

Hafich, MJ ;

Klem, JF ;

Baucom, K ;

Allerman, A .

ELECTRONICS LETTERS, 1997, 33 (12) :1097-1099

[2] A CONTROLLABLE ETCHANT FOR FABRICATION OF GASB DEVICES [J].

BUGLASS, JG ;

MCLEAN, TD ;

PARKER, DG .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (12) :2565-2567

[3] High-power light-emitting diodes operating in the 1.9 to 2.1-μm spectral range [J].

Danilova, TN ;

Zhurtanov, BE ;

Zakgeim, AL ;

Il'inskaya, ND ;

Imenkov, AN ;

Saraev, ON ;

Sipovskaya, MA ;

Sherstnev, VV ;

Yakovlev, YP .

SEMICONDUCTORS, 1999, 33 (02) :206-209

[4] NUCLEATION ON SIO2 DURING THE SELECTIVE CHEMICAL-VAPOR-DEPOSITION OF TUNGSTEN BY THE HYDROGEN REDUCTION OF TUNGSTEN HEXAFLUORIDE [J].

DESATNIK, N ;

THOMPSON, BE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (12) :3532-3539

[5] Low threshold 2.72 μm GalnAsSb/AlGaAsSb multiple-quantum-well laser [J].

Grau, M ;

Lin, C ;

Amann, MC .

ELECTRONICS LETTERS, 2002, 38 (25) :1678-1679

[6] Ternary and quaternary antimonide devices for thermophotovoltaic applications [J].

Hitchcock, CW ;

Gutmann, RJ ;

Ehsani, H ;

Bhat, IB ;

Wang, CA ;

Freeman, MJ ;

Charache, GW .

JOURNAL OF CRYSTAL GROWTH, 1998, 195 (1-4) :363-372

[7] Low threshold room-temperature continuous-wave operation of 2.24-3.04 μm GaInAsSb/AlGaAsSb quantum-well lasers [J].

Lin, C ;

Grau, M ;

Dier, O ;

Amann, MC .

APPLIED PHYSICS LETTERS, 2004, 84 (25) :5088-5090

[8] 1.9-μm and 2.0-μm laser diode pumping of Cr2+:ZnSe and Cr2+:CdMnTe [J].

Mond, M ;

Albrecht, D ;

Heumann, E ;

Huber, G ;

Kück, S ;

Levchenko, VI ;

Yakimovich, VN ;

Shcherbitsky, VG ;

Kisel, VE ;

Kuleshov, NV .

OPTICS LETTERS, 2002, 27 (12) :1034-1036

[9] Fabrication of InAs/AlSb/GaSb heterojunction bipolar transistors on Al2O3 substrates by wafer bonding [J].

Moran, PD ;

Chow, D ;

Hunter, A ;

Kuech, TF .

APPLIED PHYSICS LETTERS, 2001, 78 (15) :2232-2234

[10] 2.61 μm GaInAsSb/AlGaAsSb type I quantum well laser diodes with low threshold [J].

Salhi, A ;

Rouillard, Y ;

Angellier, J ;

Grech, P ;

Vicet, A .

ELECTRONICS LETTERS, 2004, 40 (07) :424-425

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