ZnTe single crystal growth, photoluminescence and laser ablation studies

被引：5

作者：

Bhunia, S ^{[1
]}

Bose, DN ^{[1
]}

机构：

[1] Indian Inst Technol, Ctr Mat Sci, Semicond Div, Kharagpur 721302, W Bengal, India

来源：

SOLID STATE PHENOMENA | 1997年 / 55卷

关键词：

ZnTe; crystal growth; laser; heterojunction;

D O I：

10.4028/www.scientific.net/SSP.55.43

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnTe crystals have been grown from Te rich melt by vertical Bridgman technique after synthesis by microwave heating. Bandgap of the crystals was determined to be 2.26 eV. Resistivity and hole mobility were found to be 8.7 Omega-cm and 46 cm(2)/V. sec respectively. Photoluminescence of the crystal showed peaks at 2.06, 1.47, 1.33 and 1.05 eV at 10 K. Thin films of ZnTe were deposited on glass and Si by pulsed laser ablation at substrate temperatures of 26 degrees C and 286 degrees C. Films deposited at 26 degrees C were amorphous while those deposited at 286 OC were polycrystalline. The variation of conductivity of the films with temperature and properties of the ZnTe/Si heterojunction were studied.

引用

页码：43 / 46

页数：4

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