Metastable structure and magnetism of Cr-doped AlN in AlN/TiN multilayers

被引：5

作者：

Zeng, F. ^{[1
]}

Fan, B. ^{[1
]}

Yang, Y. C. ^{[1
]}

Yang, P. Y. ^{[1
]}

Luo, J. T. ^{[1
]}

Chen, C. ^{[1
]}

Pan, F. ^{[1
]}

Yan, W. S. ^{[2
]}

机构：

[1] Tsinghua Univ, Key Lab Adv Mat, Dept Mat Sci & Engn, Beijing 100084, Peoples R China

[2] Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Peoples R China

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2010年 / 28卷 / 01期

基金：

中国国家自然科学基金;

关键词：

aluminium compounds; chromium; doping profiles; ferromagnetic materials; III-V semiconductors; magnetic multilayers; remanence; semiconductor doping; semimagnetic semiconductors; sputter deposition; titanium compounds; wide band gap semiconductors; FERROMAGNETISM; SPINTRONICS;

D O I：

10.1116/1.3271335

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[Cr:AlN/TiN] multilayers are prepared with various wavelengths and thicknesses of the single layers. Microstructure studies indicate that the structure of Cr:AlN is a rocksalt structure for the sample of [Cr:AlN(1.8 nm)/TiN(6.4 nm)](100). This sample is ferromagnetic in room temperature with a saturated magnetization of 2.88 emu/cm(3) and remanence of 25%. These values are higher than other [Cr:AlN/TiN] multilayers with large modulation wavelengths in which the Cr:AlN is a wurzite structure. The possible origin of magnetic variation is discussed for the authors' samples.

引用

页码：62 / 65

页数：4

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