Graded AlGaN Channel Transistors for Improved Current and Power Gain Linearity

被引：67

作者：

Bajaj, Sanyam ^{[1
]}

Yang, Zhichao ^{[1
]}

Akyol, Fatih ^{[1
]}

Park, Pil Sung ^{[2
]}

Zhang, Yuewei ^{[1
]}

Price, Aimee L. ^{[1
]}

Krishnamoorthy, Sriram ^{[1
]}

Meyer, David J. ^{[3
]}

Rajan, Siddharth ^{[1
]}

机构：

[1] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA

[2] Navitas Semicond, El Segundo, CA 90245 USA

[3] Naval Res Lab, Washington, DC 20375 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017年 / 64卷 / 08期

基金：

美国国家科学基金会;

关键词：

Graded AlGaN; constant f(T); gain linearity; GaN; graded AlGaN; high-electron-mobility transistor (HEMT); polarization-doped field-effect transistor (PolFET); ELECTRON-MOBILITY TRANSISTORS; MOLECULAR-BEAM EPITAXY; OHMIC CONTACTS; HEMTS; F(T);

D O I：

10.1109/TED.2017.2713784

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the small-signal high frequency characteristics of highly scaled graded AlGaN channel polarization-doped field-effect transistors (PolFETs) that show constant current gain cutoff frequency (f(T)) and maximum oscillation frequency (f(max)) profiles as a function of current density or gate bias. The device design includes upward and downward Al composition grading to induce a distributed 3-D charge profile, and eliminate abrupt heterojunction band offsets to achieve nonalloyedohmic contacts with low resistance. The highest extrinsic f(T) of 52 GHz and fmax of 67 GHz weremeasured at V-GS = -1.5 V andVDS = 9 V, and constant fT and fmax over wide input voltage (VGS) and output current range (IDS) were achieved.

引用

页码：3114 / 3119

页数：6

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