Graded AlGaN Channel Transistors for Improved Current and Power Gain Linearity

被引：65

作者：

Bajaj, Sanyam ^{[1
]}

Yang, Zhichao ^{[1
]}

Akyol, Fatih ^{[1
]}

Park, Pil Sung ^{[2
]}

Zhang, Yuewei ^{[1
]}

Price, Aimee L. ^{[1
]}

Krishnamoorthy, Sriram ^{[1
]}

Meyer, David J. ^{[3
]}

Rajan, Siddharth ^{[1
]}

机构：

[1] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA

[2] Navitas Semicond, El Segundo, CA 90245 USA

[3] Naval Res Lab, Washington, DC 20375 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017年 / 64卷 / 08期

基金：

美国国家科学基金会;

关键词：

Graded AlGaN; constant f(T); gain linearity; GaN; graded AlGaN; high-electron-mobility transistor (HEMT); polarization-doped field-effect transistor (PolFET); ELECTRON-MOBILITY TRANSISTORS; MOLECULAR-BEAM EPITAXY; OHMIC CONTACTS; HEMTS; F(T);

D O I：

10.1109/TED.2017.2713784

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the small-signal high frequency characteristics of highly scaled graded AlGaN channel polarization-doped field-effect transistors (PolFETs) that show constant current gain cutoff frequency (f(T)) and maximum oscillation frequency (f(max)) profiles as a function of current density or gate bias. The device design includes upward and downward Al composition grading to induce a distributed 3-D charge profile, and eliminate abrupt heterojunction band offsets to achieve nonalloyedohmic contacts with low resistance. The highest extrinsic f(T) of 52 GHz and fmax of 67 GHz weremeasured at V-GS = -1.5 V andVDS = 9 V, and constant fT and fmax over wide input voltage (VGS) and output current range (IDS) were achieved.

引用

页码：3114 / 3119

页数：6

共 37 条

[1] Density-dependent electron transport and precise modeling of GaN high electron mobility transistors
Bajaj, Sanyam
Shoron, Omor F.
Park, Pil Sung
Krishnamoorthy, Sriram
Akyol, Fatih
Hung, Ting-Hsiang
Reza, Shahed
Chumbes, Eduardo M.
Khurgin, Jacob
Rajan, Siddharth
[J]. APPLIED PHYSICS LETTERS, 2015, 107 (15)
[2] Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage
Bajaj, Sanyam
Hung, Ting-Hsiang
Akyol, Fatih
Nath, Digbijoy
Rajan, Siddharth
[J]. APPLIED PHYSICS LETTERS, 2014, 105 (26)
[3] MICROWAVE PERFORMANCE OF GAN MESFETS
BINARI, SC
ROWLAND, LB
KRUPPA, W
KELNER, G
DOVERSPIKE, K
GASKILL, DK
[J]. ELECTRONICS LETTERS, 1994, 30 (15) : 1248 - 1249
[4] AlGaN/GaN HEMT With 300-GHz fmax
Chung, Jinwook W.
Hoke, William E.
Chumbes, Eduardo M.
Palacios, Tomas
[J]. IEEE ELECTRON DEVICE LETTERS, 2010, 31 (03) : 195 - 197
[5] Design of High-Aspect-Ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High fmax
Denninghoff, Daniel J.
Dasgupta, Sansaptak
Lu, Jing
Keller, Stacia
Mishra, Umesh K.
[J]. IEEE ELECTRON DEVICE LETTERS, 2012, 33 (06) : 785 - 787
[6] Effect of Optical Phonon Scattering on the Performance of GaN Transistors
Fang, Tian
Wang, Ronghua
Xing, Huili
Rajan, Siddharth
Jena, Debdeep
[J]. IEEE ELECTRON DEVICE LETTERS, 2012, 33 (05) : 709 - 711
[7] High-power GaN MESFET on sapphire substrate
Gaquiere, C
Trassaert, S
Boudart, B
Crosnier, Y
[J]. IEEE MICROWAVE AND GUIDED WAVE LETTERS, 2000, 10 (01): : 19 - 20
[8] Highly doped thin-channel GaN-metal-semiconductor field-effect transistors
Gaska, R
Shur, MS
Hu, X
Yang, JW
Tarakji, A
Simin, G
Khan, A
Deng, J
Werner, T
Rumyantsev, S
Pala, N
[J]. APPLIED PHYSICS LETTERS, 2001, 78 (06) : 769 - 771
[9] Grundmann M., 2004, BANDENG, DOI [10.1063/1.3666862, DOI 10.1063/1.3666862]
[10] Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloys
Jena, D
Heikman, S
Green, D
Buttari, D
Coffie, R
Xing, H
Keller, S
DenBaars, S
Speck, JS
Mishra, UK
Smorchkova, I
[J]. APPLIED PHYSICS LETTERS, 2002, 81 (23) : 4395 - 4397

← 1 2 3 4 →