Low-temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers

被引：36

作者：

Marcenat, C. ^{[1
]}

Kacmarcik, J. ^{[1
,2
,3
]}

Piquerel, R. ^{[1
]}

Achatz, P. ^{[1
]}

Prudon, G. ^{[4
,5
]}

Dubois, C. ^{[4
,5
]}

Gautier, B. ^{[4
,5
]}

Dupuy, J. C. ^{[4
,5
]}

Bustarret, E. ^{[6
]}

Ortega, L. ^{[6
]}

Klein, T. ^{[6
,7
,8
]}

Boulmer, J. ^{[9
]}

Kociniewski, T. ^{[9
]}

Debarre, D. ^{[9
]}

机构：

[1] CEA, Inst Nanosci & Cryogenie, SPSMS LATEQS, F-38054 Grenoble, France

[2] Slovak Acad Sci, Ctr Very Low Temp Phys, IEP, Kosice 04001, Slovakia

[3] FS UPJS, Kosice 04001, Slovakia

[4] CNRS, Inst Nanotechnol Lyon, F-69621 Villeurbanne, France

[5] INSA, F-69621 Villeurbanne, France

[6] CNRS, Inst Neel, F-38042 Grenoble, France

[7] Inst Univ France, F-38041 Grenoble, France

[8] Univ Grenoble 1, F-38041 Grenoble, France

[9] Univ Paris 11, Inst Elect Fondamentale, CNRS, F-91405 Orsay, France

来源：

PHYSICAL REVIEW B | 2010年 / 81卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.81.020501

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on a detailed analysis of the superconducting properties of boron-doped silicon films grown along the 001 direction by gas immersion laser doping. The doping concentration c(B) has been varied up to similar to 10 at. % by increasing the number of laser shots to 500. No superconductivity could be observed down to 40 mK for doping level below similar to 2 at. %. The critical temperature T-c then increased steeply to reach similar to 0.6 K for c(B) similar to 8 at. %. No hysteresis was found for the transitions in magnetic field, which is characteristic of a type II superconductor. The corresponding upper critical field mu H-o(c2) (0) was on the order of 1000 G, much smaller than the value previously reported by Bustarret et al. [E. Bustarret et al., Nature (London) 444, 465 (2006)].

引用

页数：4

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