Leakage current analysis of diamond Schottky barrier diode

被引：115

作者：

Umezawa, Hitoshi ^{[1
]}

Saito, Takeyasu ^{[1
]}

Tokuda, Norio ^{[1
]}

Ogura, Masahiko ^{[1
]}

Ri, Sung-Gi ^{[1
]}

Yoshikawa, Hiromichi ^{[1
]}

Shikata, Shin-ichi ^{[1
]}

机构：

[1] Natl Inst AIST, Diamond Res Ctr, Tsukuba Ctr 2, Tsukuba, Ibaraki 3058568, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 07期

基金：

日本学术振兴会;

关键词：

D O I：

10.1063/1.2643374

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The current-voltage characteristics of non-punch-through-type diamond Schottky barrier diodes (SBDs) are analyzed by using thermionic and thermionic-field emission (TFE) models. Diamond SBD with defects such as nonepitaxial crystallites (NCs) shows shunt path conductance both under forward and reverse bias conditions. However, SBD without NCs shows a low reverse leakage current density of less than 1x10(-11) A/cm(2), which is more than 12 orders of magnitude smaller than the forward current density. From the fitting of the reverse leakage current of SBD without NCs, TFE current dominates when the reverse electric field is larger than 1.2 MV/cm and its current density value reaches 10(-6) A/cm(2) even at 1.6 MV/cm, which is lower than the avalanche limit. (c) 2007 American Institute of Physics.

引用

页数：3

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