Structural investigations of InZnO films grown by pulsed laser deposition technique

被引：8

作者：

Craciun, Doina ^{[1
]}

Socol, Gabriel ^{[1
]}

Stefan, Nicolaie ^{[1
]}

Miroiu, Marimona ^{[1
]}

Craciun, Valentin ^{[2
]}

机构：

[1] Natl Inst Lasers Plasma & Radiat Phys, Bucharest, Romania

[2] Univ Florida, Major Analyt Instrumentat Ctr, Gainesville, FL 32611 USA

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 16期

关键词：

Indium zinc oxide; Thin films; Pulsed laser deposition; TCO (transparent and conductive oxides); TRANSPARENT CONDUCTING OXIDE; ZNO THIN-FILM; PHYSICAL-PROPERTIES; TEMPERATURE GROWTH; INDIUM-OXIDE; DEVICES; ELECTRODE;

D O I：

10.1016/j.tsf.2009.12.032

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of indium zinc oxide were grown from targets within atomic concentration [In/(In + Zn)] of 2.8%, 43%, and 16.8%, respectively, by pulsed laser deposition technique (KrF laser, 10 Hz, 4 J/cm(2) fluence) on Si(001) and glass substrates that were heated at 500 degrees C. X-ray diffraction investigations showed that targets that had an atomic In concentration of 2.8% exhibited only the wurtzite-type ZnO lattice, while the targets that contained In concentrations of 4.3% and 16.8% consisted of a mixture of the wurtzite-type ZnO and the homologous compound Zn7In2O10. All deposited films exhibited only the wurtzite-type ZnO lattice, being c-axis textured. The increase of the In concentration resulted in films less textured that also exhibited increased lattice parameters a and c. X-ray photoelectron spectroscopy investigations showed slight changes of the In 3d and Zn 2p binding energies for increased In content, consistent with an In doped ZnO lattice. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：4564 / 4567

页数：4

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