Surface analysis of Si/W multilayer using total reflection X-ray photoelectron spectroscopy

被引：4

作者：

Kawai, J ^{[1
]}

Hayashi, K

Amano, H

Takenaka, H

Kitajima, Y

机构：

[1] Kyoto Univ, Dept Mat Sci & Engn, Sakyo Ku, Kyoto 60601, Japan

[2] NTT, AT, Musashino, Tokyo 180, Japan

[3] High Energy Accelerator Res Org, Inst Mat Struct Sci, Photon Factory, Tsukuba, Ibaraki 305, Japan

来源：

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 1998年 / 88卷

关键词：

grazing incidence X-rays; total reflection X-rays; X-ray multilayer optics; surface analysis;

D O I：

10.1016/S0368-2048(97)00207-7

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

X-ray photoelectron spectra of W/Si 100 bilayers on an Si wafer are measured using a soft X-ray synchrotron beam line at the Photon Factory. The grazing incident X-rays are used to excite photoelectrons. The Si Is and W 3d(5/2) photoelectron intensities are measured as a function of the glancing angle of the incident X-ray beam, The measured angle dependence of photoelectron peak intensity is reproduced by a simulation of surface layer structure. (C) 1998 Elsevier Science B.V.

引用

页码：787 / 791

页数：5

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