Relationship between microstructure and photovoltaic performance in microcrystalline silicon film solar cells fabricated by a high-density microwave plasma

被引：11
|
作者：
Ohkawara, G
Nakajima, M
Ueyama, H
Shirai, H
机构：
[1] Saitama Univ, Fac Engn, Urawa, Saitama 3388570, Japan
[2] Nihon Koshuha Co Ltd, Midori Ku, Yokohama, Kanagawa 2260011, Japan
来源：
THIN SOLID FILMS | 2003年 / 427卷 / 1-2期
关键词：
high-density plasma; microwave plasma; microcrystalline silicon; (220) preferred orientation; photovoltaic performance;
D O I：
10.1016/S0040-6090(02)01176-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Microcrystalline silicon (muc-Si) films have been prepared by a high-density, low-temperature microwave plasma for higher throughput of p-i-n junction solar cells. The correlations among plasma state, film microstructure and photovoltaic performance are investigated as functions of deposition parameters such as axial distance Z from the quartz glass plate, pressure and flow rate ratio of H-2 to SiH4 r=Fr(H-2)/Fr(SiH4). Relatively, a high deposition rate of 13 Angstrom/s is achieved with I-(2 2 0)/I-(1 1 1) of 1.7 at r = 3 and 80 mTorr pressure. Solar cells using a muc-Si photovoltaic layer show a relatively high short circuit current, J(sc) of 18 mA/ cm(2), strongly dependent on film microstructure. The correlation among plasma state, microstructure and photovoltaic performance are discussed. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：27 / 32
页数：6
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