Impact of mechanical stress on ferroelectricity in (Hf0.5Zr0.5)O2 thin films

被引：215

作者：

Shiraishi, Takahisa ^{[1
,2
]}

Katayama, Kiliha ^{[1
]}

Yokouchi, Tatsuhiko ^{[1
]}

Shimizu, Takao ^{[3
]}

Oikawa, Takahiro ^{[1
]}

Sakata, Osami ^{[1
,4
,5
]}

Uchida, Hiroshi ^{[6
]}

Imai, Yasuhiko

Kiguchi, Takanori ^{[2
]}

Konno, Toyohiko J. ^{[2
]}

Funakubo, Hiroshi ^{[1
,3
,7
]}

机构：

[1] Tokyo Inst Technol, Dept Innovat & Engn Mat, Midori Ku, 4259 Nagatsuta Cho, Yokohama, Kanagawa 2268502, Japan

[2] Tohoku Univ, Inst Mat Res, Aoba Ku, 2-1-1 Katahira, Sendai, Miyagi 9808577, Japan

[3] Tokyo Inst Technol, Mat Res Ctr Element Strategy, Midori Ku, 4259 Nagatsuta Cho, Yokohama, Kanagawa 2268502, Japan

[4] NIMS, SPring 8, Synchrotron Xray Stn, Sayo, Hyogo 6795148, Japan

[5] Japan Synchrotron Radiat Res Inst JASRI, Sayo, Hyogo 6795148, Japan

[6] Sophia Univ, Dept Mat & Life Sci, Chiyoda Ku, Tokyo 1028554, Japan

[7] Tokyo Inst Technol, Dept Mat Sci & Engn, Midori Ku, 4259 Nagatsuta Cho, Yokohama, Kanagawa 2268502, Japan

来源：

APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 26期

基金：

日本学术振兴会;

关键词：

HAFNIUM OXIDE; HFO2; THICKNESS; BEHAVIOR; ZRO2;

D O I：

10.1063/1.4954942

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To investigate the impact of mechanical stress on their ferroelectric properties, polycrystalline (Hf0.5Zr0.5)O-2 thin films were deposited on (111)Pt-coated SiO2, Si, and CaF2 substrates with thermal expansion coefficients of 0.47, 4.5, and 22 x 10(-6)/degrees C, respectively. In-plane X-ray diffraction measurements revealed that the (Hf0.5Zr0.5)O-2 thin films deposited on SiO2 and Si substrates were under in-plane tensile strain and that their volume fraction of monoclinic phase decreased as this strain increased. In contrast, films deposited on CaF2 substrates were under in-plane compressive strain, and their volume fraction of monoclinic phase was the largest among the three kinds of substrates. The maximum remanent polarization of 9.3 mu C/cm(2) was observed for Pt/(Hf0.5Zr0.5)O-2/Pt/TiO2/SiO2, while ferroelectricity was barely observable for Pt/(Hf0.5Zr0.5)O-2/Pt/TiO2/SiO2/CaF2. This result suggests that the in-plane tensile strain effectively enhanced the ferroelectricity of the (Hf0.5Zr0.5)O-2 thin films. Published by AIP Publishing.

引用

页数：5

共 37 条

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