Impact of mechanical stress on ferroelectricity in (Hf0.5Zr0.5)O2 thin films

被引：215
作者：
Shiraishi, Takahisa [1 ,2 ]
Katayama, Kiliha [1 ]
Yokouchi, Tatsuhiko [1 ]
Shimizu, Takao [3 ]
Oikawa, Takahiro [1 ]
Sakata, Osami [1 ,4 ,5 ]
Uchida, Hiroshi [6 ]
Imai, Yasuhiko
Kiguchi, Takanori [2 ]
Konno, Toyohiko J. [2 ]
Funakubo, Hiroshi [1 ,3 ,7 ]
机构：
[1] Tokyo Inst Technol, Dept Innovat & Engn Mat, Midori Ku, 4259 Nagatsuta Cho, Yokohama, Kanagawa 2268502, Japan
[2] Tohoku Univ, Inst Mat Res, Aoba Ku, 2-1-1 Katahira, Sendai, Miyagi 9808577, Japan
[3] Tokyo Inst Technol, Mat Res Ctr Element Strategy, Midori Ku, 4259 Nagatsuta Cho, Yokohama, Kanagawa 2268502, Japan
[4] NIMS, SPring 8, Synchrotron Xray Stn, Sayo, Hyogo 6795148, Japan
[5] Japan Synchrotron Radiat Res Inst JASRI, Sayo, Hyogo 6795148, Japan
[6] Sophia Univ, Dept Mat & Life Sci, Chiyoda Ku, Tokyo 1028554, Japan
[7] Tokyo Inst Technol, Dept Mat Sci & Engn, Midori Ku, 4259 Nagatsuta Cho, Yokohama, Kanagawa 2268502, Japan
来源：
APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 26期
基金：
日本学术振兴会;
关键词：
HAFNIUM OXIDE; HFO2; THICKNESS; BEHAVIOR; ZRO2;
D O I：
10.1063/1.4954942
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
To investigate the impact of mechanical stress on their ferroelectric properties, polycrystalline (Hf0.5Zr0.5)O-2 thin films were deposited on (111)Pt-coated SiO2, Si, and CaF2 substrates with thermal expansion coefficients of 0.47, 4.5, and 22 x 10(-6)/degrees C, respectively. In-plane X-ray diffraction measurements revealed that the (Hf0.5Zr0.5)O-2 thin films deposited on SiO2 and Si substrates were under in-plane tensile strain and that their volume fraction of monoclinic phase decreased as this strain increased. In contrast, films deposited on CaF2 substrates were under in-plane compressive strain, and their volume fraction of monoclinic phase was the largest among the three kinds of substrates. The maximum remanent polarization of 9.3 mu C/cm(2) was observed for Pt/(Hf0.5Zr0.5)O-2/Pt/TiO2/SiO2, while ferroelectricity was barely observable for Pt/(Hf0.5Zr0.5)O-2/Pt/TiO2/SiO2/CaF2. This result suggests that the in-plane tensile strain effectively enhanced the ferroelectricity of the (Hf0.5Zr0.5)O-2 thin films. Published by AIP Publishing.
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页数：5
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