Investigating positive oxide charge in the SiO2/3C-SiC MOS system

被引：9

作者：

Cherkaoui, Karim ^{[1
]}

Blake, Alan ^{[1
]}

Gomeniuk, Yuri Y. ^{[1
,2
]}

Lin, Jun ^{[1
]}

Sheehan, Brendan ^{[1
]}

White, Mary ^{[1
]}

Hurley, Paul K. ^{[1
]}

Ward, Peter J. ^{[3
]}

机构：

[1] Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland

[2] NAS Ukraine, V Lashkaryov Inst Semicond Phys, 41 Pr Nauki, UA-03028 Kiev, Ukraine

[3] ANVIL Semicond Ltd, Coventry, W Midlands, England

来源：

AIP ADVANCES | 2018年 / 8卷 / 08期

关键词：

INTERFACE; GROWTH;

D O I：

10.1063/1.5030636

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This paper investigates the origin of the fixed positive oxide charge often experimentally observed in Metal Oxide Semiconductor (MOS) structures of SiO2 formed on cubic silicon carbide (3C-SiC). The electrical properties of MOS structures including either thermally grown SiO2 or deposited SiO2 by Plasma Enhanced Chemical Vapour Deposition (PECVD) on epitaxial 3C-SiC layers grown directly on Si are investigated. MOS structures with a range of oxide thickness values subjected to different thermal treatments were studied. It was found that both thermally grown and deposited SiO2 on 3C-SiC exhibit similar positive charge levels indicating that the charge originates from interface states at the 3C-SiC surface and not from the oxide. The nature of this surface charge in the SiO2/3C-SiC system is also discussed based on the current data and previously published results. (C) 2018 Author(s).

引用

页数：8

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