Emission energy and polarization tuning of InAs/GaAs self-assembled quantum dots by growth interruption

被引：8

作者：

Ochoa, D

Polimeni, A

Capizzi, M

Patané, A

Henini, M

Eaves, L

Main, PC

机构：

[1] Univ Roma La Sapienza, Dipartimento Fis, Ist Nazl Fis Mat, I-00185 Rome, Italy

[2] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 251卷 / 1-4期

关键词：

nanostructures; molecular beam epitaxy; gallium compounds; semiconducting III-V materials;

D O I：

10.1016/S0022-0248(02)02402-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We study the dependence of energy and polarization properties of InxGa1-xAs/GaAs quantum dots (QDs), on the following parameters: growth interruption time (t(i)), growth temperature (T-G), QD layer thickness (L), material composition (x), and substrate orientation [(100) or (311)B]. In particular, we show that the emission energy can be tuned with t(i), for some particular growth conditions. There is also a clear dependence of the polarization on both x and the substrate orientation. However, no dependence on t(i),T-G or L was observed. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：192 / 195

页数：4

共 12 条

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