Observation of itinerant ferromagnetism and coupled magnetoresistance in a spinel CuCo2S4

被引:6
|
作者
Yue, Zengji [1 ,2 ]
Hou, Zhiqian [3 ]
Yun, Frank [1 ,2 ]
Liu, Peng [1 ,2 ]
Yang, Guangsai [1 ,2 ]
Bake, Abdulhakim [1 ]
Zhao, Weiyao [1 ,2 ]
Cortie, David [1 ,2 ]
Shu, Chaozhu [3 ]
Hu, Shaojie [4 ]
Cheng, Jipeng [5 ,6 ]
Wang, Xiaolin [1 ,2 ]
机构
[1] Univ Wollongong, Inst Superconducting & Elect Mat, Australian Inst Innovat Mat, Wollongong, NSW 2500, Australia
[2] Univ Wollongong, ARC Ctr Future Low Energy Elect Technol FLEET, Wollongong, NSW 2500, Australia
[3] Chengdu Univ Technol, Coll Mat & Chem & Chem Engn, Chengdu 610059, Sichuan, Peoples R China
[4] Xi An Jiao Tong Univ, Ctr Spintron & Quantum Syst, State Key Lab Mech Behav Mat, Xian 710049, Shaanxi, Peoples R China
[5] Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R China
[6] Zhengzhou Univ, Sch Phys & Microelect, Zhengzhou 450052, Peoples R China
关键词
SUPERCONDUCTIVITY; NANOSPHERES; COPPER; PHASE;
D O I
10.1039/d1tc02065j
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report the existence of ferromagnetism in the thiospinel compound CuCo2S4 with T-c similar to 125 K. The magneto-electronic transport of the CuCo2S4 demonstrates a metallic conductivity and positive magnetoresistance at high temperature. At low temperature, in the ferromagnetic state, there is evidence of spin-transport coupling with magnetic domains giving a region of negative magnetoresistance near the coercive field. The electronic band structure of CuCo2S4 was calculated using density-functional theory (DFT), which shows a ferromagnetic metallic state, in agreement with experiment. With nickel doping, both the spinel CuCo1.5Ni0.5S4 and CuCoNiS4 display paramagnetism down to the lowest measured temperature (3 K). This indicates that, as in other itinerant magnetic sulfides, the exchange interactions are highly sensitive to electron/hole doping. The tunable magnetism in the spinel CuCo2S4, together with its high conductivity, suggests that this thiospinel material could be a candidate for spintronic applications.
引用
收藏
页码:8874 / 8881
页数:8
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