Characteristics of the (√3 x √3)R30° superstructure of graphite by scanning tunneling microscopy

被引：3
|
作者：
An, B
Fukuyama, S
Yokogawa, K
Yoshimura, M
机构：
[1] MITI, Chugoku Natl Ind Res Inst, AIST, Hiroshima 7370197, Japan
[2] Toyota Technol Inst, Nagoya, Aichi 4688511, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 7B期
关键词：
STM; graphite; HOPG; superstructure; Ar-ion bombardment;
D O I：
10.1143/JJAP.39.4347
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The bias-voltage- and the tunneling-current-dependent scanning tunneling microscopy (STM) images of the (root 3 x root 3)R30 degrees superstructure of graphite formed near defects produced by Ar+-irradiation on highly oriented pyrolytic graphite annealed at 1373 K were investigated. The root 3 x root 3)R30 degrees superstructure of graphite is gradually changed to a triangular structure and the area of the superstructure becomes smaller with increasing bias voltage or decreasing tunneling current, namely, with increasing tip-sample distance. This result indicates that the STM image of the (root 3 x root 3)R30 degrees superstructure of graphite mainly depends on the tip-sample distance. It is suggested that the electronic superstructure induced by the defects on the surface of graphite decays faster than the electronic structure of normal graphite in vacuum.
引用
收藏
页码：4347 / 4350
页数：4
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