Improved light extraction of GaN-based light-emitting diodes by ITO patterning with optimization design

被引：14
|
作者：
Wang, Pei [1 ,2 ]
Cao, Bin [1 ]
Wei, Wei [1 ]
Gan, Zhiyin [1 ,2 ]
Liu, Sheng [1 ,2 ]
机构：
[1] Huazhong Univ Sci & Technol, Sch Mech Engn, Wuhan 430074, Peoples R China
[2] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China
来源：
SOLID-STATE ELECTRONICS | 2010年 / 54卷 / 03期
基金：
中国国家自然科学基金;
关键词：
GaN; Light-emitting diodes; Indium tin oxide; Ray-tracing simulation; Surface patterning; ENHANCEMENT; EFFICIENCY; OUTPUT;
D O I：
10.1016/j.sse.2009.10.005
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The method of surface patterning of indium tin oxide (ITO) transparent current layer has been investigated in this study to improve the light extraction efficiency of GaN-based light-emitting diodes (LEDs). Optimized design of the patterns on ITO has been performed by ray-tracing simulation and LEDs with different periodic micro-circle structures on ITO have been fabricated. The light output power of the LEDs with the optimal patterns on ITO exhibited 46.4% enhancement compared to the conventional LEDs at 20 mA injection current without electrical degradation. Detailed processing parameters are also provided. It is indicated from the results that the surface-patterned ITO technique could have potential applications in high-power GaN-based LEDs. (C) 2009 Elsevier Ltd. All rights reserved.
引用
收藏
页码：283 / 287
页数：5
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