Complex alloying effect on thermoelectric transport properties of Cu2Ge(Se1-xTex)3

被引:6
|
作者
Wang, Ruifeng [1 ,3 ]
Dai, Lu [1 ,3 ]
Yan, Yanci [1 ,2 ]
Peng, Kunling [1 ,2 ]
Lu, Xu [2 ]
Zhou, Xiaoyuan [2 ]
Wang, Guoyu [1 ,3 ]
机构
[1] Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
[2] Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China
[3] Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100049, Peoples R China
基金
中国国家自然科学基金;
关键词
thermoelectric; Cu2GeSe3; alloying; distorted structure; TEMPERATURE-DEPENDENCE; PERFORMANCE; FIGURE; POWER;
D O I
10.1088/1674-1056/27/6/067201
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
To enhance the thermoelectric performance of Cu2GeSe3, a series of Te-alloyed samples Cu2Ge(Se1-xTex)(3) are synthesized and investigated in this work. It is found that the lattice thermal conductivity is reduced drastically for x = 0.1 sample, which may be attributed to the point defects introduced by alloying. However, for samples with x >= 0.2, the lattice thermal conductivity increases with increasing x, which is related to a less distorted structure. The structure evolution, together with the change in carrier concentration, also leads to a systemically change in electrical properties. Finally, a zT of 0.55@750 K is obtained for the sample with x = 0.3, about 62% higher than that for the pristine sample.
引用
收藏
页数:6
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