Electronic Processes in CdIn2Te4 Crystals

The results of investigations of electrical, optical, and photoelectric properties of CdIn2Te4 crystals, which were grown by the Bridgman method are presented. It is shown that electrical conductivity is determined mainly by electrons with the effective mass m (n) = 0.44m (0) and the mobility 120-140 cm(2)/(V s), which weakly depends on temperature. CdIn2Te4 behaves as a partially compensated semiconductor with the donor-center ionization energy E (d) = 0.38 eV and the compensation level K = N (a) /N (d) = 0.36. The absorption-coefficient spectra at the energy h nu < E (g) = 1.27 eV are subject to the Urbach rule with a typical energy of 18-25 meV. The photoconductivity depends on the sample thickness. The diffusion length, the charge-carrier lifetime, and the surface-recombination rate are determined from the photoconductivity spectra.