Focused ion beam etched nitride/air DBRs as cavity mirror facets of violet InGaN/GaN multiple-quantum well laser diodes

被引：4

作者：

Dai, Tao

Zhang, Bei ^{[1
]}

Zhang, ZhenSheng

Xu, Jun

Chen, WeiHua

Li, Rui

Bao, Kui

Wei, QiYuan

Xu, Ke

Hu, XiaoDong

Yang, ZhiJian

Kang, XiangNing

Pan, Yaobo

Lu, Min

Zhang, Guoyi

Gan, ZiZhao

机构：

[1] Peking Univ, Sch Phys, Beijing 100871, Peoples R China

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 1 | 2007年 / 4卷 / 01期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1002/pssc.200673521

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on the demonstration of focused ion beam (FIB) etched nitride/air distributed Bragg reflector (DBR) gratings as cavity mirror facets of violet InGaN/GaN multiple quantum wells edge emitting laser diodes (LD). The nitride/air DBRs consisted of fifth order Bragg semiconductor wall and third order Bragg air gap with the depths around 1.2 micron to 1.5 micron were successfully achieved by focused Ga ion beam (FIB) milling as backside laser facets on GaN-based laser diodes. Under pulsed current injection at room temperature, sharp laser emissions were observed at the wavelength between 398 to 401 nm. The threshold currents of stripe and ridge lasers with nitride/air DBR mirror facets were found to be respectively lower than the related LDs with cleaved facets.

引用

页码：196 / +

页数：2

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