Electron saturation velocity of GaInP deduced in a GaInP/GaAs/GaInP double heterojunction bipolar transistor

被引：9

作者：

Hsin, YM ^{[1
]}

Hsu, ST ^{[1
]}

Fan, CC ^{[1
]}

机构：

[1] Natl Cent Univ, Dept Elect Engn, Chungli 320, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 10期

关键词：

D O I：

10.1063/1.1290602

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaInP/GaAs/GaInP double heterojunction bipolar transistors have been fabricated for the study of electron saturation velocity (upsilon(sat)) in GaInP. The necessary composite design at the base-collector junction, which effectively reduces the conduction band spike and avoids the premature Kirk effect, enables us to use the Kirk effect to study upsilon(sat). The deduced electron saturation velocity in GaInP is similar to 5 x 10(6) cm/sec. (C) 2000 American Institute of Physics. [S0003-6951(00)02236-1].

引用

页码：1538 / 1539

页数：2

共 9 条

[1] CALCULATED ELECTRON AND HOLE STEADY-STATE DRIFT VELOCITIES IN LATTICE MATCHED GAINP AND ALGAINP [J].