Temperature dependence of lasing wavelength in a GaInNAs laser diode

被引：63

作者：

Kondow, M ^{[1
]}

Kitatani, T ^{[1
]}

Nakahara, K ^{[1
]}

Tanaka, T ^{[1
]}

机构：

[1] Hitachi Ltd, Cent Res Lab, RWCP Optoelect Hitachi Lab, Tokyo 1858601, Japan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2000年 / 12卷 / 07期

关键词：

1.3-mu m range; laser diode; GaInNAs; high T-o; lasing wavelength stability against temperature shift; optical-fiber communications;

D O I：

10.1109/68.853497

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The temperature dependence of lasing wavelength in 1.2-mu m or 1.3-mu m-range GaInNAs edge-emitting laser diodes (LD) was found to be small. It is almost independent of characteristic temperature (T-o) and is equivalent to the temperature shift of bandgap wavelength of GaInNAs (0.42 nm/degrees C), Since the dependence is smaller than that of 1.3-mu m-range conventional InGaAsP LD's and also smaller than the required value (<0.48 nm/degrees C), it is concluded that the GaInNAs LD's are promising for use as 1.3-mu m-range light sources because of their lasing-wavelength stability against temperature shift and a high T-o. The small dependence is due to the small effect of band filling on lasing wavelength from the deep quantum well in GaInNAs LD's.

引用

页码：777 / 779

页数：3

共 9 条

[1] Experimental analysis of temperature dependence of oscillation wavelength in quantum-well FP semiconductor lasers [J].

Higashi, T ;

Yamamoto, T ;

Ogita, S ;

Kobayashi, M .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1998, 34 (09) :1680-1689

[2]

HIGASHI T, 1996, 9 M IEEE LAS EL OPT, P10

[3]

ISHIKAWA H, 1998, 1998 C LAS EL SAN FR, P293

[4] A 1.3-μm GaInNAs/GaAs single-quantum-well laser diode with a high characteristic temperature over 200 K [J].

Kitatani, T ;

Nakahara, K ;

Kondow, M ;

Uomi, K ;

Tanaka, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (2A) :L86-L87

[5] Gas-source MBE of GaInNAs for long-wavelength laser diodes [J].

Kondow, M ;

Kitatani, T ;

Larson, MC ;

Nakahara, K ;

Uomi, K ;

Inoue, H .

JOURNAL OF CRYSTAL GROWTH, 1998, 188 (1-4) :255-259

[6] GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance [J].

Kondow, M ;

Uomi, K ;

Niwa, A ;

Kitatani, T ;

Watahiki, S ;

Yazawa, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (2B) :1273-1275

[7] Room-temperature pulsed operation of GaInNAs laser diodes with excellent high-temperature performance [J].

Kondow, M ;

Nakatsuka, S ;

Kitatani, T ;

Yazawa, Y ;

Okai, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (11) :5711-5713

[8] GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes [J].

Larson, MC ;

Kondow, M ;

Kitatani, T ;

Nakahara, K ;

Tamura, K ;

Inoue, H ;

Uomi, K .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (02) :188-190

[9] PRESENT AND FUTURE APPLICATIONS OF SWITCHED-CAPACITOR CIRCUITS [J].

NAKAYAMA, K ;

KURAISHI, Y .

IEEE CIRCUITS AND DEVICES MAGAZINE, 1987, 3 (05) :10-21

← 1 →