Growth of ErAs nanodots by molecular beam epitaxy for application to tunneling junctions in multijunction solar cells

被引：4
作者：
Hung, Chao-Yu [1 ,2 ]
Sogabe, Tomah [1 ]
Miyashita, Naoya [1 ]
Okada, Yoshitaka [1 ,2 ]
机构：
[1] Univ Tokyo, RCAST, Meguro Ku, Tokyo 1538904, Japan
[2] Univ Tokyo, Sch Engn, Meguro Ku, Tokyo 1538904, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 02期
关键词：
QUANTUM DOTS; GAAS; LAYERS; MAGNETOTRANSPORT; MICROSTRUCTURE; GAAS/ERAS/GAAS; SCATTERING; ARSENIDE; DYNAMICS; SURFACES;
D O I：
10.7567/JJAP.55.021201
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
ErAs nanodots (NDs) grown on GaAs(001) substrates by using molecular beam epitaxy (MBE) were investigated. Atomic force microscope images indicate that the size of ErAs NDs increases with deposition time and growth temperature. A calibration was performed to determine the deposition rate of ErAs in order that the size of NDs can be accurately controlled and hence optimized. Local current flow images and surface profiles around ErAs NDs were simultaneously measured to clarify the local conductivity distribution corresponding to a real space profile. Furthermore, we also fabricated and characterized an ErAs-ND-embedded GaAs tunnel junction (TJ), which resulted in a voltage drop of 30 mV for 15 A/cm(2) operation current equivalent to 1000 suns concentration, which is less than one-third of that of a conventional heavily doped tunnel junction. (C) 2016 The Japan Society of Applied Physics
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页数：7
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