Incorporation of a cavity-dumped oscillator in a long-wavelength injected femtosecond terawatt Ti:sapphire laser

被引：6
|
作者：
Cha, YH [1 ]
Hong, KH [1 ]
Nam, CH [1 ]
机构：
[1] Korea Adv Inst Sci & Technol, Dept Phys, Yusong Gu, Taejon 305701, South Korea
来源：
OPTICS COMMUNICATIONS | 2000年 / 185卷 / 4-6期
关键词：
D O I：
10.1016/S0030-4018(00)01026-9
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A cavity-dumped Ti:sapphire laser was utilized as a front-end oscillator in a femtosecond terawatt Ti:sapphire laser. The increase of the oscillator energy by 30 times helped to reduce the gain narrowing and to suppress the amplified spontaneous emission in a preamplifier. In combination with the long-wavelength injection method (J. Opt. Sec. Am. B 16 (1999) 1220), an amplified spectrum broad enough to support sub-20 fs could be generated at a multiterawatt level, and 20-fs, 3-TW pulses were demonstrated. (C) 2000 Published by Elsevier Science B.V.
引用
收藏
页码：413 / 418
页数：6
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