Electrochemical behavior of nitrogenated nanocrystalline diamond electrodes

被引:15
作者
Pleskov, Yu. V.
Krotova, M. D.
Ralchenko, V. G.
Saveliev, A. V.
Bozhko, A. D.
机构
[1] Russian Acad Sci, Frumkin Inst Phys Chem & Elektrochem, Moscow 119991, Russia
[2] Russian Acad Sci, Prokhorov Gen Phys Inst, Moscow 119991, Russia
关键词
nitrogenation; nanocrystalline diamond electrode; thin films; electrochemical properties;
D O I
10.1134/S1023193507070130
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Nitrogenated nanocrystalline diamond films with controlled conductivity are deposited from microwave plasma in CH4-Ar-H-2-N-2 gas mixtures. They are characterized using atomic force microscopy, Raman spectroscopy, and electrophysical measurements. Their electrochemical properties are studied by cyclic voltammetry and electrochemical impedance spectroscopy. Kinetic parameters of reactions in [Fe(CN)(6)](3-/4) redox system are determined. The character of electrode behavior is controlled by the degree on nitrogenation. With the increasing of the nitrogen content in the reaction gas mixture (from 0 to 25%), the potential window somewhat narrows, the background current increases, the reversibility of reactions in the [Fe(CN)(6)](3-/4) redox system increases. By and large, the transition occurs from the electrochemical behavior of a "poor conductor" to that of a metal-like electrode.
引用
收藏
页码:827 / 836
页数:10
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