Testing 3D Chips Containing Through-Silicon Vias

被引:0
|
作者
Marinissen, Erik Jan [1 ]
Zorian, Yervant [2 ]
机构
[1] IMEC VZW, Kapeldreef 75, B-3001 Louvain, Belgium
[2] Virage Log, Fremont, CA 94538 USA
关键词
3-DIMENSIONAL INTEGRATED-CIRCUITS; DESIGN; PERFORMANCE; BIST;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Today's miniaturization and performance requirements result in the usage of high-density integration and packaging technologies, such as 3D Stacked ICs (3D-SICs) based on Through-Silicon Vias (TSVs). Due to their advanced manufacturing processes and physical access limitations, the complexity and cost associated with testing this type of 3D-SICs are considered major challenges. This Embedded Tutorial provides an overview of the manufacturing steps of TSV-based 3D chips and their associated test challenges. It discusses the necessary flows for wafer-level and package-level tests, the challenges with respect to test contents and wafer-level probe access, and the on-chip DfT infrastructure required for 3D-SICs.
引用
收藏
页码:569 / +
页数:3
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