Semipolar GaN films on patterned r-plane sapphire obtained by wet chemical etching

被引：50

作者：

de Mierry, P. ^{[1
]}

Kriouche, N. ^{[1
]}

Nemoz, M. ^{[1
]}

Chenot, S. ^{[1
]}

Nataf, G. ^{[1
]}

机构：

[1] CNRS, CRHEA, F-06560 Valbonne, France

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 23期

关键词：

D O I：

10.1063/1.3454278

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown that (11 (2) over bar2)-oriented GaN films can be achieved from r-sapphire patterned by chemical etching. Growth first occurs selectively from the inclined c-facet of sapphire, leading finally to a fully coalesced layer with (11 (2) over bar2) orientation. The structural and optical quality of these layers was assessed by x-ray diffraction, cathodoluminescence and photoluminescence measurements. The results clearly show that the quality of (11 (2) over bar2) GaN on patterned r-sapphire is markedly improved in comparison with (11 (2) over bar2) GaN on m-sapphire. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3454278]

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