Vertical Field-Plated NiO/Ga2O3 Heterojunction Power Diodes

被引：6

作者：

Gong, Hehe ^{[1
]}

Yu, Xinxin ^{[1
,2
]}

Xu, Yang ^{[1
]}

Zhou, Jianjun ^{[2
]}

Ren, Fangfang ^{[1
]}

Gu, Shulin ^{[1
]}

Zhang, Rong ^{[1
]}

Ye, Jiandong ^{[1
]}

机构：

[1] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210023, Peoples R China

[2] Nanjing Elect Devices Inst, Sci & Technol Monolith Integrated Circuits & Modu, Nanjing 210016, Peoples R China

来源：

2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM) | 2021年

基金：

国家重点研发计划;

关键词：

Ga2O3; field plate; heterojunction; post annealing;

D O I：

10.1109/EDTM50988.2021.9420914

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, vertical NiO/Ga2O3 heterojunction diodes (HJDs) have been demonstrated with the integrated SiNx/Al2O3 double-layered insulating field plate (FP) structure. With the optimal post annealing, the device performance has been improved with a decreased differential specific on-resistance (R-on,R-sp), a decreased reverse leakage current density and the elimination of double barrier behavior in forward bias condition, which is due to the reduced interface defects produced by the plasma damage of fabricated process. Our work provides an optimized way for the heterojunction devices based on Ga2O3 material to solve the difficulty of p-type Ga2O3.

引用

页数：3

共 8 条

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