Stability and magnetism of strongly correlated single-layer VS2

被引:272
作者
Zhuang, Houlong L. [1 ,2 ]
Hennig, Richard G. [2 ,3 ]
机构
[1] Princeton Univ, Dept Mech & Aerosp Engn, Princeton, NJ 08544 USA
[2] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
[3] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
基金
美国国家科学基金会;
关键词
PHASE-TRANSITION; FERROMAGNETISM; SE; MONOLAYERS;
D O I
10.1103/PhysRevB.93.054429
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Single-layer transition metal dichalcogenides exhibit a variety of atomic structures and associated exotic electronic and magnetic properties. Density-functional calculations using the LDA+U approximation show that single-layer VS2 is a strongly correlated material, where the stability, phonon spectra, and magnetic moments of the octahedral (1T) and the trigonal prismatic (2H) structures significantly depend on the effective Hubbard U parameter, U-eff. Comparison with the HSE06 hybrid density functional used as a benchmark indicates that U-eff = 2.5 eV, which consistently shows that the 2H structure is more stable than the 1T structure and a ferromagnetic semiconductor. The magnetic moments are localized on the V atoms and coupled ferromagnetically due to the super exchange interactions mediated by the S atoms. Calculations of the magnetic anisotropy show an easy plane for the magnetic moment. Assuming a classical XY model with nearest neighbor coupling, we determine the critical temperature, T-c, for the Berezinsky-Kosterlitz-Thouless transition of 2H single-layer VS2 to be about 90 K. Applying biaxial tensile strains can increase T-c. Using Wannier interpolation, we evaluate the Berry curvature and anomalous Hall conductivity of 2H single-layer VS2. The coexistence of quasi-long-range ferromagnetic ordering and semiconducting behavior enables 2H single-layer VS2 to be a promising candidate for spintronics applications.
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页数:7
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