Capacitance reconstruction from measured C-V in high leakage, nitride/oxide MOS

被引：38
作者：
Choi, CH [1 ]
Wu, Y
Goo, JS
Yu, ZP
Dutton, RW
机构：
[1] Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA
[2] Adv Micro Devices Inc, Sunnyvale, CA 94088 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2000年 / 47卷 / 10期
基金：
美国国家科学基金会;
关键词：
composite nitride/oxide gate dielectrics; C-V reconstruction; MOSFETs; tunneling;
D O I：
10.1109/16.870559
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A reconstruction technique of the gate capacitance from anomalous capacitance-voltage (C-V) curves in high leakage dielectric MOSFETs is presented. An RC network is used to accommodate the distributed nature of MOSFETs and an optimization technique is applied to extract the intrinsic gate capacitance. Applicability of the method is demonstrated for ultra-thin nitride/oxide (N/O similar to 1.4 nm/0.7 nm) composite dielectric MOSFETs.
引用
收藏
页码：1843 / 1850
页数：8
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