A quadrupole ion trap as low-energy cluster ion beam source

被引：5

作者：

Uchida, N ^{[1
]}

Bolotov, L ^{[1
]}

Kanayama, T ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, AIST, Joint Res Ctr Atom Technol, JRCAT, Tsukuba, Ibaraki 3058562, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2003年 / 42卷 / 2A期

关键词：

ion trap; cluster-ion beam; ion-beam deposition; mass-selected cluster; hydrogenated silicon cluster;

D O I：

10.1143/JJAP.42.707

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Kinetic energy distribution of ion beams was measured by a retarding field energy analyzer for a mass-selective cluster ion beam deposition system that uses a quadrupole ion trap as a cluster ion beam source. The results indicated that the system delivers a cluster-ion beam with energy distribution of similar to2 eV, which corresponded well to the calculation results of the trapping potentials in the ion trap. Using this deposition system, mass-selected hydrogenated Si cluster ions SinHx+ were actually deposited on Si(111)-(7 x 7) surfaces at impact kinetic energy E-d of 3-30 eV. Observation by using a scanning tunneling microscope (STM) demonstrated that Si6Hx+ cluster ions landed on the surface without decomposition at E-d = 3 eV, while the deposition was destructive at Ed greater than or equal to 18 eV.

引用

页码：707 / 712

页数：6

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